Gate and recess engineering for ultrahigh-speed InP-based HEMTs

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1283-1288

  Suemitsu, Tetsuya ^a   Ishii, Tetsuyoshi ^a,b   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

HEMTs; High speed devices; Indium phosphide; Millimeter wave FETs

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

GATE RECESS; HIGH-SPEED DEVICES; INDIUM PHOSPHIDE BASED HEMTS; MILLIMETER WAVE FIELD EFFECT TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035483079     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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5. Ultrahigh-speed integrated circuits using InP-based HEMTs
6. 0.05-μm gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects
7. Nanocomposite resist system
8. High-aspect-ratio nanometer-pattern fabrication using fullerene-incorporated nanocomposite resists for dry-etching application
9. Improved recessed-gate structure for sub-0.1-μm-gate InP-based high electron mobility transistors
10. An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation
11. Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMT's by means of an InP etch stop layer
12. T of millimeter-wave MODFET's
13. Reliability study of InAlAs/InGaAs HEMTs with a recess-etch stopper and refractory gate metal
14. Effect of atmosphere on reliability of passivated 0.15μm InAlAs/InGaAs HEMTs