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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1062-1066

Optimization and interface characterization of a novel oxide-free insulated gate structure for InP having an ultrathin silicon interface control layer

(4) Fu, Zhengwen a Takahashi, Hiroshi a Kasai, Seiya a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

InGaAs; InP; MISFET; Surface passivation; UHV contactless C V; XPS

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DRAIN CURRENTS; INTERFACE CONTROL LAYERS (ICL);

GATES (TRANSISTOR);

EID: 0036478721 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1062 Document Type: Conference Paper

Times cited : (1)

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