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Volumn , Issue , 1999, Pages 117-124

Sample Preparation for Backside Failure Analysis Using Infrared Photoemission Microscopy

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVES; FAILURE ANALYSIS; GRINDING WHEELS; IMAGE ANALYSIS; INFRARED RADIATION; INTEGRATED CIRCUITS; MICROSCOPIC EXAMINATION; OPTICAL FILTERS; OPTIMIZATION; PHOTOEMISSION; SEMICONDUCTOR DOPING;

EID: 1542330849     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 1
    • 85069064056 scopus 로고    scopus 로고
    • High Speed Diamond Based Machining of Silicon Semiconductor Die in Wafer and Packaged Form for Backside Emission Microscopy Detection", US Patent No 5698474 December
    • D T Hurley, "High Speed Diamond Based Machining of Silicon Semiconductor Die in Wafer and Packaged Form for Backside Emission Microscopy Detection", US Patent No 5698474 December 1997.
    • (1997)
    • Hurley, D.T.1
  • 3
    • 0031335141 scopus 로고    scopus 로고
    • Infrared Imaging and Backside Failure Analysis Techniques on Multilayer CMOS Technology
    • S Chen, B Shinseki, C Barutha & T Kha, "Infrared Imaging and Backside Failure Analysis Techniques on Multilayer CMOS Technology", Proceedings of the 6th IPFA 17-20, 1997.
    • (1997) Proceedings of the 6th IPFA , pp. 17-20
    • Chen, S.1    Shinseki, B.2    Barutha, C.3    Kha, T.4
  • 6
    • 0031366745 scopus 로고    scopus 로고
    • The Infrared Photoemission Microscope as a Tool for Semiconductor Device Failure Analysis
    • A D Trigg, "The Infrared Photoemission Microscope as a Tool for Semiconductor Device Failure Analysis", Proceedings of the 6th IPFA 21 -26, 1997.
    • (1997) Proceedings of the 6th IPFA , pp. 21-26
    • Trigg, A.D.1
  • 8
    • 0026686001 scopus 로고
    • Silicon Temperature Measurement by Infrared Absorption: Fundamental Processes and Doping Effects
    • J C Sturm & C M Reeves, "Silicon Temperature Measurement by Infrared Absorption: Fundamental Processes and Doping Effects", IEEE Transaction Electron Devices 39(1), 81-88, 1992.
    • (1992) IEEE Transaction Electron Devices , vol.39 , Issue.1 , pp. 81-88
    • Sturm, J.C.1    Reeves, C.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.