-
1
-
-
0022561939
-
Analysis of Product Hot-Electron Problems by Gated Emission Microscopy
-
N. Khurana and C. L. Chiang, "Analysis of Product Hot-Electron Problems by Gated Emission Microscopy," Proc. IRPS, pp. 189-194, 1986.
-
(1986)
Proc. IRPS
, pp. 189-194
-
-
Khurana, N.1
Chiang, C.L.2
-
2
-
-
0345472699
-
Second Generation Emission Microscopy and Its Applications
-
N. Khurana, "Second Generation Emission Microscopy and Its Applications," Proc. ISTFA, pp. 277-283, 1989.
-
(1989)
Proc. ISTFA
, pp. 277-283
-
-
Khurana, N.1
-
3
-
-
0345041384
-
Infrared Emission Microscope Analyzes Defects in Multilevel LSI and Silicon Bulk
-
Sept.
-
K. Etoh, "Infrared Emission Microscope Analyzes Defects in Multilevel LSI and Silicon Bulk," Nikkei Electronics Asia, pp. 66-69, Sept. 1992.
-
(1992)
Nikkei Electronics Asia
, pp. 66-69
-
-
Etoh, K.1
-
4
-
-
0344610104
-
Failure Analysis on VLSI Circuits Using Emission Microscopy for Backside Observation
-
B. Picart and G. Deboy, "Failure Analysis on VLSI Circuits Using Emission Microscopy for Backside Observation," Proc. ESREF, pp. 515-520, 1992.
-
(1992)
Proc. ESREF
, pp. 515-520
-
-
Picart, B.1
Deboy, G.2
-
5
-
-
0010012001
-
Emission Analysis of Semiconductor Devices from Backside of the Chip
-
E. Inuzuka, S. Oguri, and Y. Hiruma, "Emission Analysis of Semiconductor Devices from Backside of the Chip," Proc. ESREF, pp. 269-272, 1992
-
(1992)
Proc. ESREF
, pp. 269-272
-
-
Inuzuka, E.1
Oguri, S.2
Hiruma, Y.3
-
6
-
-
0009974299
-
Functional Failure Analysis Technology from Backside of VLSI Chip
-
T. Ishii, K. Miyamoto, K. Naitoh, and K. Azamawari, "Functional Failure Analysis Technology from Backside of VLSI Chip," Proc. ISTFA, pp. 41-47, 1994.
-
(1994)
Proc. ISTFA
, pp. 41-47
-
-
Ishii, T.1
Miyamoto, K.2
Naitoh, K.3
Azamawari, K.4
-
7
-
-
0345041383
-
Investigation of Multi-Level Metallization ULSIs by Light Emission from the Back-Side and Front-Side of the Chip
-
K. Naitoh, T. Ishii, and J.-I. Mitsuhashi, "Investigation of Multi-Level Metallization ULSIs by Light Emission from the Back-Side and Front-Side of the Chip," Proc. ISTFA, pp. 145-151, 1997.
-
(1997)
Proc. ISTFA
, pp. 145-151
-
-
Naitoh, K.1
Ishii, T.2
Mitsuhashi, J.-I.3
-
8
-
-
0345472374
-
Infrared Laser Microscopy of Structures on Heavily Doped Silicon
-
T. W. Joseph, A. L. Berry, and B. Bossmann, "Infrared Laser Microscopy of Structures on Heavily Doped Silicon," Proc. ISTFA, pp. 1-7, 1992.
-
(1992)
Proc. ISTFA
, pp. 1-7
-
-
Joseph, T.W.1
Berry, A.L.2
Bossmann, B.3
-
9
-
-
85124087662
-
Failure Analysis from Back Side of Die
-
N. M. Wu, K. Weaver, and J.H. Lin, "Failure Analysis from Back Side of Die," Proc. ISTFA, pp.393-399, 1996.
-
(1996)
Proc. ISTFA
, pp. 393-399
-
-
Wu, N.M.1
Weaver, K.2
Lin, J.H.3
-
10
-
-
84866733033
-
Infrared Light Emission from Semiconductor Devices
-
C. L. Barton, P. Tangyunyong, J. M. Soden, A. Y. Liang, F. J. Low, A. N. Zaplatin, K. Shivanandan, and G. Donohoe, "Infrared Light Emission from Semiconductor Devices," Proc. ISTFA, pp. 9-17, 1996.
-
(1996)
Proc. ISTFA
, pp. 9-17
-
-
Barton, C.L.1
Tangyunyong, P.2
Soden, J.M.3
Liang, A.Y.4
Low, F.J.5
Zaplatin, A.N.6
Shivanandan, K.7
Donohoe, G.8
-
11
-
-
0003624373
-
-
Spinger-Verlog, New York
-
See, for example, K. Seeger, Semiconductor Physics, Spinger-Verlog, New York, 1973.
-
(1973)
Semiconductor Physics
-
-
Seeger, K.1
-
12
-
-
0022414938
-
Evaluation of Silicon Optical Absorption Data for Use in Minority-Carrier-Diffusion-Length Measurements by the SPV Method
-
E. S. Nortowitz and A. M. Goodman, "Evaluation of Silicon Optical Absorption Data for Use in Minority-Carrier-Diffusion-Length Measurements by the SPV Method," J. Electrochem. Soc., Vol. 132, No. 12, pp. 2992-2997, 1985.
-
(1985)
J. Electrochem. Soc.
, vol.132
, Issue.12
, pp. 2992-2997
-
-
Nortowitz, E.S.1
Goodman, A.M.2
-
13
-
-
0008498504
-
Infrared Absorption in n-Type Silicon
-
W. Spitzer and H. Y. Fan, "Infrared Absorption in n-Type Silicon," Phys. Rev. Vol. 108, No. 2, pp. 268-271, 1957.
-
(1957)
Phys. Rev.
, vol.108
, Issue.2
, pp. 268-271
-
-
Spitzer, W.1
Fan, H.Y.2
-
14
-
-
84860084653
-
-
D. K. Schroder, R. N. Thomas, and J. C. Swartz, IEEE Trans. Electron. Dev. Vol. ED-25, No. 2, pp. 254-261, 1978.
-
(1978)
IEEE Trans. Electron. Dev.
, vol.ED-25
, Issue.2
, pp. 254-261
-
-
Schroder, D.K.1
Thomas, R.N.2
Swartz, J.C.3
-
15
-
-
0031676233
-
Backside Localization of Open and Shorted IC Interconnection
-
E. I. Cole Jr., P. Tangyunyong, and D. Barton, "Backside Localization of Open and Shorted IC Interconnection," Proc. IRPS, pp. 129-136, 1998.
-
(1998)
Proc. IRPS
, pp. 129-136
-
-
Cole Jr., E.I.1
Tangyunyong, P.2
Barton, D.3
-
16
-
-
0031676542
-
Dynamics of Backside Wafer Level Microprobing
-
C. L. Chiang and D. T. Hurley, "Dynamics of Backside Wafer Level Microprobing," ibid. pp. 137-149.
-
Proc. IRPS
, pp. 137-149
-
-
Chiang, C.L.1
Hurley, D.T.2
-
17
-
-
0021372907
-
Optical and Electrical Properties of the Heavily Phosphorous-Doped Epitaxial Silicon Layers
-
G. Lubberts and B. C. Burkey, "Optical and Electrical Properties of the Heavily Phosphorous-Doped Epitaxial Silicon Layers," J. Appl. Phys., Vol. 55, No. 3, pp. 760-763, 1984.
-
(1984)
J. Appl. Phys.
, vol.55
, Issue.3
, pp. 760-763
-
-
Lubberts, G.1
Burkey, B.C.2
-
18
-
-
84862046106
-
-
"High Speed Diamond Based Machining of Silicon Semiconductor Die in Wafer and Packaged Form for Backside Emission Microscopy Detection," U.S. Patent No. 5698474, December
-
D. T. Hurley, "High Speed Diamond Based Machining of Silicon Semiconductor Die in Wafer and Packaged Form for Backside Emission Microscopy Detection," U.S. Patent No. 5698474, December 1997.
-
(1997)
-
-
Hurley, D.T.1
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