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Volumn 118, Issue 1-3, 2005, Pages 117-121

Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films

Author keywords

Dielectric; High k; MOCVD; Praseodymium oxide

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; PRASEODYMIUM COMPOUNDS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 15344342154     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.022     Document Type: Conference Paper
Times cited : (15)

References (12)
  • 1
    • 0004245602 scopus 로고    scopus 로고
    • Semiconductors Industry Association, San Jose, California
    • International Technology Roadmap for Semiconductors, Semiconductors Industry Association, San Jose, California, http://public.itrs.net, 2002.
    • (2002) International Technology Roadmap for Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.