Catastrophic failure of power silicon PN junctions at high temperature induced by the surface leakage reverse current

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 185-188

  Obreja, V V N ^a   Buiu, O ^b   Nuttall, K I ^b   Codreanu, C ^a   Sung, M L ^c   Pei, P ^c  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c Concord Semiconductor Corp ^*  (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEGRADATION; DIELECTRIC MATERIALS; DIFFUSION; DIODES; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; FAILURE ANALYSIS; GAIN CONTROL; HEAT RESISTANCE; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SHORT CIRCUIT CURRENTS; SILICON; VOLTAGE CONTROL;

DEPLETION LAYERS; POWER DISSIPATION; REVERSE CURRENTS; THERMAL RUNAWAYS;

SEMICONDUCTOR JUNCTIONS;

EID: 14844320526     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. V.V.N.Obreja, "On the leakage current of present-day manufactured semiconductor junctions," in Solid-State Electronics, vol.44, pp. 49-57, January 2000
2. V.V.N.Obreja, "An experimental investigation on the nature of reverse current of power silicon PN junctions," in IEEE Trans. on Electron Devices, vol.49, pp. 155-163, January 2002
3. K.I.Nuttall, O.Buiu, V.V.N.Obreja, "Surface leakage current related failure of power silicon devices operated at high junction temperature,"in Microelectronics and Reliability, vol. 43 (9-11), pp. 1913-1918, Sept-Nov. 2003
4. V.V.N.Obreja, C.Codreanu, K.I.Nuttall, "Experiments on behavior of power silicon PN junctions under reverse bias voltage at high temperature" in Proc. Thermal & Mechanical Simulation and Experiments in Micro-electronics and Microsystems (EuroSIME), 2004 (to be published)
5. V.V.N.Obreja, K.I.Nuttall, "On the high temperature operation of high voltage power devices" in Proc. International Semiconductor Conference, 2002, pp.253-256
6. V.V.N.Obreja, K.I.Nuttall, O.Buiu, "Electrical characteristics of present -day manufactured power semiconductor PN junctions and the I-V characteristic theory" in Proc. International Semiconductor Conference, 2003, pp.253-256
7. V.V.N.Obreja, C.Codreanu, K.I.Nuttall, O.Buiu, C.Podaru, "The operation temperature of silicon power thyristors and the leakage blocking current" 35th IEEE Power Electronics Specialists Conference (PESC) 2004 (accepted paper)