Experiments on behaviour of power silicon PN junctions under reverse bias voltage at high temperature

Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004

Volumn , Issue , 2004, Pages 185-190

  Obreja, Vasile V N ^a   Codreanu, Cecilia ^a   Nuttall, Keith ^b   Buiu, Octavian ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; HEAT SINKS; HEATING; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR JUNCTIONS;

BIAS VOLTAGE; JUNCTION AREA; JUNCTION TEMPERATURE; REVERSE CURRENT;

SILICON;

EID: 3843115556     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Obreja V.V.N., Nuttall K. "On the High Temperature Operation of High Voltage Power Devices", Proc. 25th International Semiconductor Conference (CAS2002), Sinaia, Romania, Oct. 2002, pp.253-256
2. th International Power Electronics Conference (PCIM2003), Nurenberg, Germany, May 2003
3. Obreja, V.V.N., "An Experimental Investigation on the Nature of Reverse Current of Power Silicon pn Junctions," IEEE Trans-Electron Devices, Vol. 49, No. 1(2002), pp. 155-163.
4. Nuttall K., Buiu O., Obreja V.V.N., "Surface Leakage Current Related Failure of Power Silicon Devices Operated at High Junction Temperature" Microelectronics and Reliability, vol. 43 (9-11), Sept-Nov.2003, pp.1913-1918
5. Nuttall, K., Obreja V.V.N., "The Surface Component of PN Junction Reverse Current - a Serious Limitation for the Operation of Power Devices above 150-175°C", Proc. 10th European Power Electronics and Applications Conference (EPE2003), Toulouse, France, Sept. 2003
6. Obreja V.V.N., Nuttall K., Buiu O., "Electrical Characteristics of Present-Day Manufactured Power Semiconductor Junctions and the I-V Characteristic Theory" Proc. International Semiconductor Conference (CAS2003), Sinaia, Romania, Sept -Oct. 2003 pp. 253-256.