Surface leakage current related failure of power silicon devices operated at high junction temperature

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1913-1918

  Nuttall, K I ^a   Buiu, O ^a   Obreja, V V N ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; SHORT CIRCUIT CURRENTS; SILICON;

JUNCTION TEMPERATURE;

LEAKAGE CURRENTS;

EID: 0042694286     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00325-1     Document Type: Conference Paper

References (6)

1. Obreja V., On the leakage current of present-day manufactured semiconductor junctions. Solid State Electronics, vol.44, No.1,.2000, p. 49-57
2. Obreja V., An experimental investigation on the nature of reverse current of power silicon PN junctions. IEEE Transactions on Electron Devices vol. 49, No. 1, 2002, pp. 155-163
3. th International Semiconductor Conf. (CAS2002), Sinaia, Romania, Oct. 2002
4. th International Power Electronics Conf. (PCIM2003), Nuremberg, 20-22 May, 2003
5. th European Power Electronics and Applications Conference (EPE2003), Sept.03, Toulouse, France
6. th International Semiconductor Conf., Sept.03, Sinaia, Romania