Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures

Physica Status Solidi (B) Basic Research

Volumn 223, Issue 2, 2001, Pages 507-512

  Konczewicz, L ^a   Jouault, B ^a   Contreras, S ^a   Sadowski, M L ^a   Robert, J L ^a   Blanc, S ^b   Fontaine, Ch ^b  

^a UNIV MONTPELLIER   (France)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035530592     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200101)223:2<507::AID-PSSB507>3.0.CO;2-U     Document Type: Article

References (8)

1. D. L. SMITH, Solid State Commun. 57, 919 (1986).
2. D. L. SMITH and C. MAILHIOT, Phys. Rev. Lett. 58, 1264 (1987).
3. B. K. LAURICH, K. ELCESS, C. G. FONSTAD, J. G. BEERY, C. MAILHIOT, and D. L. SMITH, Phys. Rev. Lett. 62, 6, 649 (1989).
4. O. MADELUNG (Ed.), Data in Science and Technology, Semicanductors: Group IV Elements and III-V Compounds, Springer-Verlag, Berlin 1991.
5. S. NIKI, C. L. LIN, W. S. C. CHANG, and H. H. WILDER, Appl. Phys. Lett. 55, 13, 1339 (1989).
6. D. J. CHADI and K. J. VCHANG, Phys. Rev. B 39, 10063 (1989).
7. V. MOSSER, S. CONTRERAS, PH. LORENZINI, and J. L. ROBERT, Mater. Sci. Forum 143/147, 1117 (1994).
8. J. L. SANCHEZ-ROJAS, A. SACEDON, F. GONZALES-SANZ, E. CALLEJA, and E. MUNOZ, Appl. Phys. Lett. 65, 16, 2042 (1994).