Improvement of the electron density in the channel of an AlGaAs/GaAs heterojunction by introducing Si δ doping in the quantum well

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8223-8227

  Bouzaiene L ^a   Sfaxi, L ^a   Sghaeir H ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COLOR CENTERS; ELECTRON GAS; ELECTRONIC DENSITY OF STATES; FINITE DIFFERENCE METHOD; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; WAVE EQUATIONS;

DELTA DOPING; POISSON EQUATION; SCHRODINGER EQUATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0344183087     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370662     Document Type: Article

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