DX centres, conduction band offsets and Si-dopant segregation in AlxGa1-xAs/GaAs heterostructures

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 766-771

  Leuther, A ^a   Forster A ^a   Luth H ^a   Holzbrecher, H ^a   Breuer, U ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; COMPOSITION; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; HALL EFFECT; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

ALUMINUM GALLIUM ARSENIC; CONDUCTION BAND OFFSETS; DX CENTERS; GALLIUM ARSENIC; SILICON DOPANT SEGREGATION;

HETEROJUNCTIONS;

EID: 0030142863     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/019     Document Type: Article

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