Simulation-based design and experimental evaluation of a spatially controllable CVD reactor

AIChE Journal

Volumn 51, Issue 2, 2005, Pages 572-584

  Choo, Jae Ouk ^a   Adomaitis, Raymond A ^a   Rubloff, Gary W ^a   Henn Lecordier, Laurent ^a   Liu, Yijun ^a,b  

^a UNIVERSITY OF MARYLAND   (United States)

^b ASM AMERICA   (United States)

Author keywords

Chemical vapor deposition; Distributed parameter systems; Semiconductor processing; Simulation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; PHASE COMPOSITION; PROCESS CONTROL; TUNGSTEN;

GAS-PHASE CHEMICAL COMPOSITION; REACTANTS;

CHEMICAL REACTORS;

TUNGSTEN;

CHEMICAL VAPOR DEPOSITION;

ARTICLE; CHEMICAL ENGINEERING; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DIFFUSION COEFFICIENT; FILM; FLOW RATE; GAS; MATERIALS; MATHEMATICAL MODEL; MEASUREMENT; PROCESS DESIGN; REACTOR; SEMICONDUCTOR; SINGLE WAFER REACTOR; TEMPERATURE; THICKNESS;

EID: 14644415552     PISSN: 00011541     EISSN: None     Source Type: Journal    
DOI: 10.1002/aic.10358     Document Type: Article

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