Interface morphology of thermal-oxide/Si(001) studied by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 12, 2002, Pages 7293-7296

  Gotoh, Masahide ^a   Sudoh, Koichi ^a   Iwasaki, Hiroshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Interface; Roughness; Si; SiO2; STM; Thermal oxidation

Indexed keywords

ELECTRON BEAMS; IRRADIATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SILICA; THERMOOXIDATION; ULTRAHIGH VACUUM;

OXIDE FILMS;

INTERFACES (MATERIALS);

EID: 0036997484     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.7293     Document Type: Article

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