Self-aligned ground-plane FDSOI MOSFET

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 23-24

  Xiong, W ^a   Ramkumar, K ^a   Jang, S J ^b   Park, J T ^b   Colinge, J P ^c  

^a CYPRESS SEMICONDUCTOR   (United States)

^b SolarLight Ltd   (South Korea)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; ELECTRODES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT;

GROUND PLANE (GP) ELECTRODES;

MOSFET DEVICES;

EID: 0036456564     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044401     Document Type: Conference Paper

References (4)

1. T. Ernst and S. Cristoloveanu, Electrochemical Society Proceedings 99-3, p. 329, 1999.
2. M. Horiuchi et al., IEEE Trans. on Electron Devices, Vol.45-5, p. 1111, 1998.
3. W. Xiong and J.P. Colinge, Electronics Letters, Vol. 35, No. 23, p. 2059, 1999.
4. Y. Ma, D.R. Evans, T. Nguyen, Y. Ono, and S.T. Hsu, IEEE Electron Dev. Lett., Vol.20-5, p.254, 1999.