Critical dimension measurement in nanometer scale by using scanning probe microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 4166-4174

  Nagase, Masao ^a   Namatsu, Hideo ^a   Kurihara, Kenji ^a   Makino, Takahiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Anisotropic wet etching; Critical dimension measurement; Electron beam lithography; Metrological method; Rectangular cross section; Scanning probe microscopy; Si nano structure

Indexed keywords

EQUATIONS OF STATE; ETCHING; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; SPATIAL VARIABLES MEASUREMENT;

ANISOTROPIC WET ETCHING; CRITICAL DIMENSION MEASUREMENT; NANOMETER SCALE; SCANNING PROBE MICROSCOPY;

SCANNING TUNNELING MICROSCOPY;

EID: 0030196262     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4166     Document Type: Article

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