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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6711-6719

Formulation of a viscoelastic stress problem using analytical integration and its application to viscoelastic oxidation simulation

(2) Uchida, Tetsuya a Nishi, Kenji a

a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

Finite element method; LSI fabrication process; Mechanical stress; Process simulation; Thermal oxidation of silicon; Viscoelasticity

Indexed keywords

ASYMPTOTIC STABILITY; CALCULATIONS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; ITERATIVE METHODS; LSI CIRCUITS; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES; THERMAL EFFECTS; TWO DIMENSIONAL; VISCOELASTICITY;

MECHANICAL STRESS; THERMAL OXIDATION OF SILICON; TWO DIMENSIONAL OXIDATION PROGRAM; VISCOELASTIC OXIDATION; VISCOELASTIC STRESS;

SEMICONDUCTING SILICON;

EID: 0035711833 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.6711 Document Type: Article

Times cited : (9)

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