Optical anisotropy of self-assembled InGaAs quantum dots embedded in wall-shaped and air-bridge structures

Applied Physics Letters

Volumn 81, Issue 21, 2002, Pages 3954-3956

  Nakaoka, T ^a   Kako, S ^a   Ishida, S ^a   Nishioka, M ^a   Arakawa, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTRUM ANALYSIS; STRAIN;

AIR-BRIDGE STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037132220     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1522824     Document Type: Article

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27. Unfortunately, it is hard to observe the splitting in a common single QD between the wall-shaped structure and the air bridge because there are about one hundred QDs in the irradiated area.