Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 506-510

  Sato, T ^a   Yamaguchi, T ^a   Izumida, W ^a   Tarucha, S ^a,b   Song, H Z ^c   Miyazawa, T ^c   Nakata, Y ^c   Ohshima, T ^c   Yokoyama, N ^c  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Fock Darwin state; Quantum dot; Self assembled InAs dot; Single electron transport

Indexed keywords

DOPING (ADDITIVES); ELECTRON TRANSITIONS; ELECTRON TUNNELING; FERMI LEVEL; GROUND STATE; PHOTONS; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

FOCK DARWIN STATE; SELF ASSEMBLED INAS DOTS; SINGLE ELECTRON TRANSPORT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642359527     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.070     Document Type: Conference Paper

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