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Journal of Materials Research

Volumn 19, Issue 3, 2004, Pages 913-920

Li-doped NiO epitaxial thin film with atomically flat surface

(7) Kamiya, T a,b Ohta, H b,c Kamiya, M a Nomura, K a,b Ueda, K a,d Hirano, M b Hosono, H a,b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NAGOYA UNIVERSITY (Japan)

d KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Annealing; Deposition (PLD); Thin film

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; EVAPORATION; PULSED LASER DEPOSITION; THICK FILMS; THIN FILMS; CARRIER MOBILITY; CRYSTAL STRUCTURE; DOPING (ADDITIVES); EPITAXIAL GROWTH; HALL EFFECT; LITHIUM; OPTICAL PROPERTIES; TEMPERATURE;

ANNEALING TEMPERATURES; ATOMICALLY FLAT SURFACE; COMBINED TECHNIQUES; ELECTRICAL CONDUCTIVITY; EPITAXIAL THIN FILMS; HIGH ELECTRICAL CONDUCTIVITY; SINGLE-CRYSTALLINE; STRUCTURAL AND OPTICAL PROPERTIES; LI-DOPED NIO;

LITHIUM; ANNEALING; NICKEL COMPOUNDS;

ATOMICALLY FLAT SURFACE; CRYSTAL QUALITY; HALL MOBILITY;

EID: 13844295317 PISSN: 08842914 EISSN: 20445326 Source Type: Journal
DOI: 10.1557/jmr.2004.19.3.913 Document Type: Article

Times cited : (31)

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