Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM

Electronics Letters

Volumn 41, Issue 2, 2005, Pages 101-103

  Porti, M ^a   Nafria M ^a   Aymerich, X ^a   Cester, A ^b,c   Paccagnella, A ^b,c   Cimino, S ^b,c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ENERGY TRANSFER; IRRADIATION; LEAKAGE CURRENTS; MOS DEVICES; OXIDES;

BREAKDOWN (BD); ELECTRICAL CONDUCTION; GATE OXIDES; OXIDE THICKNESS;

SILICON COMPOUNDS;

EID: 13844256591     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057289     Document Type: Article

References (10)

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