Effects of buffer layers on the structural and electronic properties of InSb films

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Weng, X ^a   Rudawski, N G ^a   Wang, P T ^a   Goldman, R S ^a   Partin, D L ^b   Heremans, J ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b DELPHI CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION POTENTIAL; DISLOCATIONS DENSITY; LATTICE DIALATION; LATTICE MISMATCH;

CARRIER CONCENTRATION; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); ELECTRON SCATTERING; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 13744255334     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1841466     Document Type: Article

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