Effect of an in1-xAlxSb buffer layer on InSb thin film mobility

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1267-1271

  Partin, D L ^a  

^a GENERAL MOTORS CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644449093     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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4. K. J. Goldammer, W. K. Liu, G. A. Khodaparast, S. C. Lindstrom, M. B. Johnson, R. E. Doezema, and M. B. Santos, J. Vac. Sci. Technol. B 16, 1367 (1998).
5. D. L. Partin, J. Heremans, and G. M. Thrush, J. Appl. Phys. 71, 2328 (1992).
6. D. L. Partin, J. Heremans, and C. M. Thrush, J. Cryst. Growth 175, 860 (1997).
7. D. L. Partin, J. Heremans, and G. M. Thrush, Sens. Actuators A 69, 39 (1998).
8. Landolt-Bomstein Numerical Data and Functional Relationships in Science and Technology, Vol. 17, Subvolume 1, edited by O. Madelung (Springer, Berlin, 1982), p. 594.