Study of band structure inxGa1-xN/GaN multiple quantum wells by high-resolution electron microscopy and electron holography

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Lu W ^a,b   Li, C R ^b   Zhang, Z ^c  

^a JILIN UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLOGRAPHY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

BIPRISM; DATA-LINK ELECTRONIC SYSTEMS; INTERFACE SHARPNESS; STRAIN RELAXATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 13644281074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856138     Document Type: Article

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