Influence of residual point defect supersaturation on the formation of grown-in oxide precipitate nuclei in CZ-Si

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages

  Kissinger, G ^a,c   Vanhellemont, J ^b   Lambert, U ^b   Graf D ^b   Dornberger, E ^b   Richter, H ^a,c  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

^c ELECTROCHEMICAL SOCIETY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; APPROXIMATION THEORY; CRYSTAL GROWTH; HEAT TREATMENT; MATHEMATICAL MODELS; NUCLEATION; POINT DEFECTS; PRECIPITATION (CHEMICAL); STACKING FAULTS; SUPERSATURATION;

FIRST ORDER APPROXIMATION MODEL;

SILICON WAFERS;

EID: 0032070067     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838492     Document Type: Article

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