Scaling capability improvement of silicon-on-void (SOV) MOSFET

Semiconductor Science and Technology

Volumn 20, Issue 2, 2005, Pages 115-119

  Tian, Yu ^a   Bu, Weihai ^a   Wu, Dake ^a   An, Xia ^a   Huang, Ru ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; PERMITTIVITY; SILICON; SUBSTRATES; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

CHANNEL LENGTH; SCALING; SILICON-ON-VOID (SOV); SIMULATED STRUCTURE;

MOSFET DEVICES;

EID: 13644275694     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/2/002     Document Type: Article

References (12)

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