Partial SOI/SON formation by He+ implantation and annealing

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 185-186

  Ogura, Atsushi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HELIUM; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

LIGHT ION IMPLANTATION (LII) TECHNIQUE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036458928     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A. Ogura, Jpn. J. Appl. Phys., 40, L1075 (2001).
2. R. Hamman, et al., 2000 Symposium on VLSI Technology, p.66 (2000).
3. T. Sato et al., IEDM Tech. Dig. 517 (2001).