GaAs/AlGaAs quantum well intermixing using high-density argon plasma

Semiconductor Science and Technology

Volumn 20, Issue 2, 2005, Pages 244-249

  Djie, H S ^a,b   Mei, T ^a   Arokiaraj, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; DIFFUSION; ION IMPLANTATION; OPTOELECTRONIC DEVICES; PLASMA DENSITY; REACTIVE ION ETCHING; SEMICONDUCTOR QUANTUM WELLS;

BANDGAP SHIFT; IMPURITY DIFFUSION; LATTICE DAMAGE; QUANTUM WELL INTERMIXING (QWI);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 13644273758     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/2/025     Document Type: Article

References (26)

1. Marsh J H 1993 Semicond. Sci. Technol. 8 1136
2. Piva P G, Poole P J, Buchanan M, Champion G, Templeton I M, Aers G C, Williams R L, Wasilewski Z R, Koteles E S and Charbonneau S 1994 Appl. Phys. Lett. 65 621
3. Tan H H, Williams J S, Jagadish C, Burke P T and Gai M 1996 Appl. Phys. Lett. 66 2401
4. Paquette M, Beauvais J, Beerens J, Poole P J, Charbonneau S, Miner C J and Blaauw C 1997 Appl. Phys. Lett. 71 3749
5. Eshlaghi S, Meier C, Suter D, Reuter D and Wieck A D 1999 J. Appl. Phys. 866605
6. Ong T K, Chan Y C, Lam Y L and Ooi B S 2001 Appl. Phys. Lett. 78 2637
7. Djie H S, Mei T, Arokiaraj J and Thilakan P 2002 Japan. J. Appl. Phys. 41 L867
8. Ooi B S, Bryce A C and Marsh J H 1995 Electron. Lett. 31 449
9. Djie H S, Arokiaraj J, Mei T, Tang X H, Ang L K and Leong D 2003 J. Vac. Sci. Technol. B 21 L1
10. Djie H S, Sookdhis C, Mei T and Arokiaraj J 2003 Electron. Lett. 38 1672
11. Walker C L, Bryce A C and Marsh J H 2002 IEEE Photon. Technol. Lett. 14 1391
12. Walker C L, Bryce A C and Marsh J H 2002 IEEE Photon. Technol. Lett. 14 1394
13. Chang J C P, Woodall J M, Melloch M R, Lahiri I, Nolte D D, Li N Y and Tu C W 1995 Appl. Phys. Lett. 67 3491
14. Wong H F, Green D L, Liu T Y, Lishan D G, Bellis M, Hu E L, Petroff P M, Holtz P O and Merz J L 1988 J. Vac. Sci. Technol. B 6 1906
15. Djie H S, Mei T, Arokiaraj J, Sookdhis C, Yu S F, Ang L K and Tang X H 2004 IEEE J. Quantum Electron. 40 166
16. Green D L, Hu E L and Stoffel N G 1994 J. Vac. Sci. Technol. B 12 3311
17. Ooi B S, Ayling S G, Bryce A C and Marsh J H 1995 IEEE Photon. Technol. Lett. 7 944
18. Ooi B S, McIlvaney K, Street M W, Helmy A S, Ayling S G, Bryce A C, Marsh J H and Roberts J S 1997 IEEE J. Quantum Electron. 33 1784
19. Poole P J, Charbonneau S, Aers G C, Jackman T E, Buchanan M, Dion M, Goldberg R D and Mitchell IV 1995 J. Appl. Phys. 78 2361
20. Poole P J, Piva P G, Buchanan M, Aers G C, Roth A P, Dion M, Wazilewski Z R, Koteles E S and Beauvais J 1994 Semicond. Sci. Technol. 9 2134
21. Djie H S, Ng S L, Gunawan O, Dowd P, Aimez V, Beauvais J and Beerens J 2002 IEE J. Optoelectron. 149 138
22. Gontijo I, Tang Y S, De La Rue R M, Torres C M S, Roberts J S and Marsh J H 1994 J. Appl. Phys. 76 5434
23. Kowalski O P, Hamilton C J, McDougall S D, Marsh J H, Bryce A C, De La Rue R M, Vogele B and Stanley C R 1998 Appl. Phys. Lett. 72 581
24. Deenapanray P N K and Jagadish C 2001 J. Vac. Sci. Technol. B 19 1962
25. Gillin W P, Kimber A C, Dunstan D J and Webb R P 1994 J. Appl. Phys. 76 3361
26. Rao E V K, Juhel M, Krauz P, Gao Y and Thibierge H 1993 Appl. Phys. Lett. 62 2096