Analysis of strain-induced polarisation-insensitive integrated waveguides fabricated using ion-implantation-induced intermixing

IEE Proceedings: Optoelectronics

Volumn 149, Issue 4, 2002, Pages 138-144

  Djie, H S ^a   Ng, S L ^a   Gunawan, O ^a   Dowd, P ^a   Aimez, V ^a   Beauvais, J ^a   Beerens, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; LIGHT POLARIZATION; LITHOGRAPHY; OPTICAL VARIABLES MEASUREMENT; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

ION-IMPLANTATION-INDUCED INTERMIXING; POLARISATION-RESOLVED PHOTOCURRENT ABSORPTION MEASUREMENTS; QUANTUM WELL WAVEGUIDES; STRAIN-INDUCED POLARISATION-INSENSITIVE INTEGRATED WAVEGUIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036698186     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20020528     Document Type: Article

References (13)

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