Improved catastrophic optical damage level from laser with nonabsorbing mirrors

IEEE Photonics Technology Letters

Volumn 14, Issue 10, 2002, Pages 1394-1396

  Walker, C L ^b   Bryce, A C ^a,b   Marsh, J H ^a,b  

^a IEEE

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Catastrophic optical damage (COD); High power lasers; High brightness lasers; Nonabsorbing mirrors (NAMs); Quantum well intermixing (QWI)

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; ENERGY GAP; HIGH POWER LASERS; HIGH TEMPERATURE EFFECTS; LIGHT ABSORPTION; MIRRORS; OPTICAL WAVEGUIDES; POINT DEFECTS; SEMICONDUCTOR QUANTUM WELLS; SILICA; SPUTTER DEPOSITION;

CATASTROPHIC OPTICAL DAMAGE LEVEL; HIGH-BRIGHTNESS LASERS; NONABSORBING MIRRORS; QUANTUM WELL INTERMIXING;

SEMICONDUCTOR LASERS;

EID: 0036773497     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.802080     Document Type: Article

References (12)

1. D. F. Welch, "A brief history of high-power semiconductor lasers," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 1470-1477, Nov. 2000.
2. W. C. Tang, H. J. Rosen, P. Vettiger, and D. J. Webb, "Evidence for current-density induced heating of AlGaAs single-quantum-well laser facets," Appl. Phys. Lett., vol. 59, pp. 1005-1007, 1991.
3. R. Puchert, A. Bärwolf, U. Menzel, A. Lau, M. Voss, and T. Elaesser, "Facet and bulk heating of GaAs/AlGaAs high-power laser arrays studied in spatially resolved emission and micro-Raman experiments," J. Appl. Phys., vol. 80, pp. 5559-5563, 1996.
4. M. Fukuda, M. Okayasu, J. Temmyo, and J. I. Nakano, "Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation," IEEE J. Quantum Electron., vol. 30, pp. 471-476, Mar. 1994.
5. x layer," IEEE Photon. Technol. Lett., vol. 12, pp. 13-15, 2000.
6. J. Marsh, "Quantum well intermixing," Semicond. Sci. Technol., pp. 1136-1155, 1993.
7. Y. Suzuki, Y. Horikoshi, M. Kobayashi, and H. Okamoto, "Fabrication of GaAlAs 'window-stripe' multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying," Electron. Lett., vol. 20, pp. 383-384, 1984.
8. J. K. Lee, K. H. Park, D. H. Jang, H. S. Cho, C. S. Park, K. E. Pyun, and J. Jeong, "Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser diodes using impurity induced layer disordering," IEEE Photon. Technol. Lett., vol. 10, pp. 1226-1228, Sept. 1998.
9. K. Hiramoto, M. Gasawa, T. Kikawa, and S. Tsuji, "High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 817-820, July 1999.
10. R. M. Lammert, G. M. Smith, D. V. Forbes, M. L. Osowski, and J. J. Coleman, "Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD," Electron. Lett., vol. 31, pp. 1070-1072, 1995.
11. S. D. McDougall, O. P. Kowalski, C. J. Hamilton, F. Camacho, B. Qiu, M. Ke, R. M. De La Rue, A. C. Bryce, and J. H. Marsh, "Monolithic integration via a universal damage enhanced quantum-well intermixing technique," IEEE J. Select. Topics Quantum Electron., vol. 4, pp. 636-646, Apr. 1998.
12. H. C. Ko, M. W. Cho, J. H. Chang, and M. Yang, "A new structure of 780 nm AlGaAs/GaAs high power laser diode with nonabsorbing mirrors," Appl. Phys. A, pp. 467-470, 1999.