Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6605-6607

  Eshlaghi, Soheyla ^a,b   Meier, C ^b   Suter, Dieter ^a   Reuter, D ^b   Wieck, A D ^b  

^a TU DORTMUND UNIVERSITY   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001313189     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371720     Document Type: Article

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