Silicon dioxide passivation of InP/InGaAs metal-semiconductor-metal photodetectors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1712-1718

  Kollakowski, St ^a   Schade, U ^a,c   Bottcher E H ^a   Kuhl, D ^a,d   Bimberg, D ^a   Ambree P ^b,d   Wandel, K ^b,e  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

^c Inst fuer Planetenerkundung   (Germany)

^d IGZ   (Germany)

^e SENTECH INSTRUMENTS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; MAGNETRON SPUTTERING; OXIDATION; PASSIVATION; QUANTUM EFFICIENCY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SILICA;

DARK CURRENTS; INDIUM GALLIUM ARSENIDE; PHOTOCURRENT GAIN; RADIOFREQUENCY MAGNETRON SPUTTERING; SCHOTTKY BARRIER HEIGHT;

PHOTODETECTORS;

EID: 0030143056     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589215     Document Type: Article

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