Application of focused ion beam techniques and transmission electron microscopy to thin-film transistor failure analysis

Journal of Electron Microscopy

Volumn 53, Issue 5, 2004, Pages 465-470

  Tsuji, Satoshi ^a   Tsujimoto, Katsuhiro ^b   Kuroda, Kotaro ^c   Saka, Hiroyasu ^c  

^a IBM JAPAN LTD   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Failure analysis; Focused ion beam; Liquid crystal display; Nanometer scale; Pinpoint analysis; Thin film transistor; Transmission electron microscopy

Indexed keywords

SILICON;

ARTICLE; EQUIPMENT; LABORATORY DIAGNOSIS; METHODOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EQUIPMENT FAILURE; EQUIPMENT FAILURE ANALYSIS; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; SILICON; SPECIMEN HANDLING; TRANSISTORS;

AMORPHOUS FILMS; AMORPHOUS SILICON; DEFECTS; ETCHING; FAILURE ANALYSIS; FILM PREPARATION; FOCUSED ION BEAMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IONS; LIQUID CRYSTAL DISPLAYS; THIN FILM CIRCUITS; THIN FILMS;

AMORPHOUS SILICON THIN-FILM TRANSISTORS (A-SI:H TFTS); C. THIN FILM TRANSISTOR (TFT); FOCUSED ION BEAM TECHNIQUE; FOCUSED IONS BEAMS; HYDROGENATED AMORPHOUS SILICON THIN FILMS; INDUCED DEFECTS; LIQUID-CRYSTAL DISPLAY; MECHANICAL STRESS; NANO-METER-SCALE; PINPOINT ANALYSE;

THIN FILM TRANSISTORS;

EID: 13444311046     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/dfh090     Document Type: Article

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