Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 531-536

  Chen, K W ^a   Wang, Y L ^b,d   Liu, C P ^e   Yang, Kevin ^c   Chang, L ^a   Lo, K Y ^d   Liu, C W ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c Asia IC Mic Process Inc   (Taiwan)

^d NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^e NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Chemical mechanical planarization (CMP); Computer simulation; Copper

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COMPUTER SIMULATION; COPPER PLATING; ELECTRIC CONTACTS; ELECTROPLATING; POLISHING MACHINES; PROCESS CONTROL; PROFILOMETRY; SLURRIES; THICKNESS MEASUREMENT;

CHEMICAL MECHANICAL PLANARIZATION (CMP); ROTARY POLISHERS;

COPPER;

EID: 1342323668     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.07.015     Document Type: Conference Paper

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