Novel retaining ring to reduce CMP edge exclusion

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2001, Pages 337-340

  Touzov, Mikhail M ^a   Fujita, Takashi ^a   Doy, Toshiroh Karaki ^b  

^a Tokyo Seimitsu Co Ltd   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MACHINE DESIGN; RINGS (COMPONENTS); THIN FILMS; WSI CIRCUITS;

PAD WAVE HYPOTHESIS;

CHEMICAL MECHANICAL POLISHING;

EID: 0035160746     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ISSM.2001.962981     Document Type: Article

References (5)

1. The effect of wafer shape on slurry film thickness and friction coefficients in chemical mechanical planarization
2. Analysis of flow between a wafer and pad during CMP process
3. Study on polishing profile at wafer edge by CMP using floating head
4. Wafer polishing characteristics of direct air back carrier CMP
5. Global planarization technique/CMP by high precision polishing and its characteristics