Empirical-based modeling for control of CMP removal uniformity

Solid State Technology

Volumn 44, Issue 6, 2001, Pages 101-106

  Jensen, A ^a   Renteln, P ^a   Jew, S ^a   Raeder, C ^a   Cheung, P ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FILMS; ITERATIVE METHODS; PRESSURE EFFECTS; REGRESSION ANALYSIS; REMOVAL;

LINEAR PLANARIZATION TECHNOLOGY (LPT);

WSI CIRCUITS;

EID: 0035366026     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (4)

1. Linear velocity and its effect on planarity
2. Characterization and modeling of nanotopography effects on CMP
3. Wafer flateness requirements for future technologies
4. Controlling CMP removal rate profiles using emperical modeling