Low-temperature preparation and characterization of SrxBi2+yTa2O9/SiO2/Si structure for MFOS memory FET

IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 1998, Pages 59-62

  Matsumuro, Yoshinori ^a   Sugiyama, Hideki ^a   Noda, Minoru ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATION; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; FILM GROWTH; FILM PREPARATION; LASER ABLATION; MISFET DEVICES; MOS CAPACITORS; SEMICONDUCTING SILICON; SILICA; STRONTIUM COMPOUNDS; THIN FILMS;

METAL FERROELECTRIC INSULATOR SEMICONDUCTOR (MFIS) DIODES; METAL FERROELECTRIC OXIDE SEMICONDUCTOR (MFOS) CAPACITORS;

DIELECTRIC FILMS;

EID: 0032265037     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)