Fabrication and characterization of (1 - x)SrBi2Ta2O9-xBi3TaTiO9 layered structure solid solution thin films for ferroelectric random access memory (FRAM) applications

Thin Solid Films

Volumn 340, Issue 1, 1999, Pages 53-61

  Ryu, S O ^a   Tirumala, S ^a   Joshi, P C ^a   Desu, S B ^a  

^a State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; FERROELECTRICITY; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PERMITTIVITY; THIN FILMS;

FERROELECTRIC RANDOM ACCESS MEMORY APPLICATIONS; METALLORGANIC SOLUTION DEPOSITION TECHNIQUES; POLARIZATION CHARGE;

BISMUTH COMPOUNDS;

EID: 0032647562     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01331-5     Document Type: Article

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