In situ measurements of stress relaxation during strained layer heteroepitaxy

Materials Research Society Symposium - Proceedings

Volumn 583, Issue , 2000, Pages 167-175

  Chason, E ^a   Yin, J ^a   Tetz, K ^a   Beresford, R ^b   Freund, L B ^b   Ujue Gonzalez, M ^c   Floro, J A ^c  

^a BROWN UNIVERSITY   (United States)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN MEASUREMENT; SUBSTRATES; SURFACES; THERMAL EFFECTS;

HETEROEPITAXIAL MATERIALS; MISFIT STRAIN;

STRESS RELAXATION;

EID: 0033695491     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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