Reactive ion etching damage to the electrical properties of ferroelectric thin films

Journal of Materials Research

Volumn 13, Issue 2, 1998, Pages 362-367

  Pan, W ^a   Thio, C L ^a   Desu, S B ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CAPACITORS; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES; HYSTERESIS; ION BOMBARDMENT; LEAKAGE CURRENTS; PLASMA APPLICATIONS; THIN FILMS;

ETCHING DAMAGE; FERROELECTRIC CAPACITOR; FERROELECTRIC THIN FILM;

REACTIVE ION ETCHING;

EID: 0032003228     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0048     Document Type: Article

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