P-type delta-doped SiGe/Si heterostructure field effect transistors

Electronics Letters

Volumn 38, Issue 21, 2002, Pages 1289-1291

  Chien, P W ^a   Wu, S L ^b   Lee, S C ^a   Chang, S J ^a   Miura, H ^c   Koh, S ^c   Shiraki, Y ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Department of Electronic Engineering   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGE SWING (GVS);

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEGREES OF FREEDOM (MECHANICS); ELECTRIC BREAKDOWN; ENERGY GAP; FILM GROWTH; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0037057278     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020851     Document Type: Article

References (5)

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2. 0.8As heterostructures', IEEE Electron Device Lett., 1996, 43, p. 1174.
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