A Monte Carlo model for predicting the effective emissivity of the silicon wafer in rapid thermal processing furnaces

International Journal of Heat and Mass Transfer

Volumn 45, Issue 9, 2002, Pages 1945-1949

  Zhou, Y H ^a   Shen, Y J ^a   Zhang, Z M ^a   Tsai, B K ^b   DeWitt, D P ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MICROELECTRONIC PROCESSING; MONTE CARLO METHODS; SILICON WAFERS; THERMOMETERS;

EMISSIVITY; RAPID THERMAL PROCESSING (RTP);

HEAT TRANSFER;

EMISSION; FURNACE; INDUSTRIAL APPLICATION; MONTE CARLO SIMULATION; SILICON;

EID: 0037017614     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0017-9310(01)00295-2     Document Type: Article

References (10)

1. Rapid thermal processing technology for the 21st century
2. Surface temperature measurement using optical techniques
3. ITS-90 calibration of radiometers using wire/thin-film thermocouples in the NIST RTP tool: Experimental procedures and results
4. Temperature measurement issues in rapid thermal processing
5. An effective emissivity model for rapid thermal processing using the net-radiation method
6. Monte Carlo solution for the directional effective emissivity of a cylindro-inner cone
7. Calculation of the effective emissivities of specular-diffuse cavities by the Monte Carlo method
8. Determining the uncertainty of wafer temperature measurements induced by variations in the optical properties of common semiconductor materials
9. Impact of directional properties on the radiometric temperature measurement in rapid thermal processing