Charge retention characteristics of (Bi,La) 4Ti 3O 12 capacitors : Comparison with Pb(Zr,Ti)O 3 capacitors

Journal of the Korean Physical Society

Volumn 46, Issue 1, 2005, Pages 19-23

  Yoon, Jong Gul ^a   Kim, D J ^b   So, Y W ^b   Jiyoung, J O ^b   Noh, Tae W ^b   Song, T K ^c   Noh, K H ^d   Lee, S S ^d   Oh, S H ^d   Hong, S K ^d   Park, Y J ^d  

^a Suwon University   (South Korea)

^b Seoul National University   (South Korea)

^c Changwon National University   (South Korea)

^d Hynix Semiconductor Inc   (South Korea)

Author keywords

Nnonvolatile ferroelectric memory; Polarization switching; Retention

Indexed keywords

EID: 12944249254     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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