Temperature effects on charge retention characteristics of integrated SrBi2(Ta,Nb)2O9 capacitors

Applied Physics Letters

Volumn 71, Issue 17, 1997, Pages 2538-2540

  Shimada, Y ^a   Nakao, K ^a   Inoue, A ^a   Azuma, M ^a   Uemoto, Y ^a   Fujii, E ^a   Otsuki, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042691865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120110     Document Type: Article

References (16)

1. T. Mihara, H. Watanabe, C. A. Araujo, J. Cuchiaro, M. Scott, and L. D. McMillan, in Proceedings of 4th International Symposium on Integrated Ferroelectrics, edited by R. Panholzer (University of Colorado at Colorado Springs Press, Colorado Springs, CO, 1992), pp. 137-157.
2. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
3. Y. Shimada, Y. Nagano, E. Fujii, M. Azuma, Y. Uemoto, T. Sumi, Y. Judai, S. Hayashi, N. Moriwaki, J. Nakane, T. Otsuki, C. A. Paz de Araujo, and L. D. McMillan, Integr. Ferroelectr. 11, 229 (1995).
4. J. T. Evans and R. Womack, IEEE J. Solid-State Circuits 23, 1171 (1988).
5. A. Gregory R. Zucca, S. Q. Wang, M. Brassington, and N. Abt, in Proceedings of 30th International Reliability Physics Symposium (IEEE Electron Device and Reliability Society, New York, 1992), pp. 91-94.
6. R. Moazzami, N. Abt, Y. Nissan-Cohen, W. H. Shepherd, M. P. Brassington, and C. Hu, in Symposium on VLSI Technology Digest of Technical Papers, edited by T. Tokuyama and D. Bartelink (Business Center for Academic Societies Japan, Tokyo, 1991), pp. 61-62.
7. N. E. Abt, in Proceedings of 3rd International Symposium on Integrated Ferroelectrics, edited by C. A. Paz de Araujo (University of Colorado at Colorado Springs Press, Colorado Springs, CO, 1991), pp. 404-413.
8. J. M. Benedetto, R. A. Moore, and F. B. McLean, J. Appl. Phys. 75, 460 (1994).
9. T. Mihara, H. Yoshimori, H. Watanabe, and C. A. Paz de Araujo, Jpn. J. Appl. Phys., Part 1 34, 2380 (1995).
10. D. J. Taylor, R. E. Jones, P. Zurcher, P. Chu, Y. T. Lii, B. Jiang, and S. J. Gillespie, Appl. Phys. Lett. 68, 2300 (1996).
11. Y. Oishi, S. Hayashi, T. Otsuki, J. D. Cuchiaro, and C. A. Paz de Araujo, in Abstracts of 1996 Spring Meeting, Ferroelectric Thin Films V, edited by S. B. Desu, R. Ramesh, B. A. Tuttle, R. E. Jones, and I. K. Yoo (Material Research Society, Pittsburgh, 1996), p. 336.
12. J. M. Benedetto, M. L. Roush, I. K. Lloyd, R. Ramesh, and B. Rychlik, Integr. Ferroelectr. 10, 279 (1995).
13. W. L. Warren, D. Dimos, G. E. Pike, B. A. Tuttle, M. V. Raymond, R. Ramesh, and J. T. Evans, Jr., Appl. Phys. Lett. 67, 866 (1995).
14. W. L. Warren, B. A. Tuttle, D. Dimos, G. E. Pike, H. N. Al-Shareef, R. Ramesh, and J. T. Evans, Jr., Jpn. J. Appl. Phys., Part 1 35, 1521 (1996).
15. K. Amanuma and T. Kunio, Jpn. J. Appl. Phys., Part 1 35, 5229 (1996).
16. J. Robertson, C. W. Chen, W. L. Warren, and C. D. Gutleben, Appl. Phys. Lett. 69, 1704 (1996).