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Volumn 188, Issue 1-2, 2002, Pages 75-79
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Limited In incorporation during pseudomorphic InAs/GaAs growth and quantum dot formation observed by in situ stress measurements
a
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Author keywords
GaAs; InAs; Molecular beam epitaxy; Quantum dot; Segregation; Stress
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Indexed keywords
CHEMICAL BONDS;
IN SITU PROCESSING;
MOLECULAR BEAM EPITAXY;
SELF ASSEMBLY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
STRESS ANALYSIS;
SURFACE REACTIONS;
THERMAL EFFECTS;
HETEROEPITAXIAL SYSTEMS;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0037070672
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(01)00706-1 Document Type: Article |
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Times cited : (9)
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References (14)
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