Extraction of Schottky barrier height in highly boron doped small size metal-silicon contact

Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

  Jang, Moongyu ^a   Cho, Wonju ^a   Jung, Woosuk ^a   Lee, Seongjae ^a   Park, Kyoungwan ^b   Lee, Junghwan ^c   Cha, Jaehan ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Seoul   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Schottky barrier; Small size contact; Thermionic field emission

Indexed keywords

EID: 0037307015     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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