Analysis of the ideality factor in surface leaky HgCdTe photodiodes for the long-wavelength infrared region

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 448-454

  Bhan, R K ^a   Koul, S K ^a   Basu, P K ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MERCURY COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

LONG WAVELENGTH INFRARED REGION (LWIR);

PHOTODIODES;

EID: 0031122667     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/019     Document Type: Article

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