Nanoscopic electric potential probing: Influence of probe-sample interface on spatial resolution

Applied Physics Letters

Volumn 84, Issue 4, 2004, Pages 601-603

  Kuntze, S B ^a   Sargent, E H ^a   Dixon Warren, St J ^b   White, J K ^b   Hinzer, K ^b   Ban, D ^c  

^a UNIVERSITY OF TORONTO   (Canada)

^b Bookham Technology   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; BORON; CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FERMI LEVEL; HETEROJUNCTIONS; IMAGE ANALYSIS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; SCANNING; SEMICONDUCTOR DOPING; SENSORS;

RESISTANCE CAPACITANCE (RC); SCANNING VOLTAGE MICROSCOPY (SVM);

ELECTRIC POTENTIAL;

EID: 1242352421     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1643534     Document Type: Article

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