SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 59-62

A review of the role of excess Si in SiO2 at the growing oxide interface

(1) Jaccodine, Ralph a

a LEHIGH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FILM GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDATION; OXIDES; REACTION KINETICS; SILICA; SILICON ALLOYS; THIN FILMS;

DEAL GROVE MODEL; EXCESS SILICON; OXIDATION MECHANISM; OXIDE INTERFACES; THERMAL OXIDATION;

SILICON;

EID: 0036955040 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-716-b1.13 Document Type: Conference Paper

Times cited : (2)

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