SCOPUS 정보 검색 플랫폼

Volumn 36, Issue 1-4, 1997, Pages 395-398

Detailed characterization of Unibond material

(9) Munteanu, D a Maleville, C b Cristoloveanu, S a Moriceau, H b Aspar, B b Raynaud, C b Faynot, O b Pelloie, J L b Auberton Herve A J c

a Grenoble INP Phelma (France)

b CEA LETI (France)

c PARC TECHNOLOGIQUE DES FONTAINES (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MOSFET DEVICES; OPTICAL PROPERTIES; SILICON WAFERS; THIN FILM CIRCUITS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS; ELECTRIC NETWORK PARAMETERS; ELECTRON ENERGY LEVELS; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

UNIBOND WAFERS;

SILICON ON INSULATOR TECHNOLOGY; MOSFET DEVICES;

EID: 0031150275 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(97)00088-9 Document Type: Article

Times cited : (8)

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