Effect of total dose radiation on FETs fabricated in UNIBONDTM SOI material

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 94-95

  Liu, S T ^a   Jenkins, W C ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; DOSIMETRY; POINT CONTACTS; RADIATION EFFECTS; RADIATION HARDENING; SILICON ON INSULATOR TECHNOLOGY;

RADIATION INDUCED THRESHOLD VOLTAGE SHIFT; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

FIELD EFFECT TRANSISTORS;

EID: 0030397236     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)